PART |
Description |
Maker |
JANTX2N6766 |
N Channel MOSFET; Package: TO-204AE; ID (A): 30; PD (W): 150; BVDSS (V): 200; Rq: 0.83; 30 A, 200 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
Microsemi, Corp.
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IRF9643-001PBF IRF9643-003PBF IRF9643-005PBF IRF96 |
9 A, 150 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET 8.7 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC 1.75 A, 150 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET 1.75 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET 27 A, 100 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC 3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET 3 A, 150 V, 2.4 ohm, P-CHANNEL, Si, POWER, MOSFET 2.5 A, 100 V, 1.6 ohm, P-CHANNEL, Si, POWER, MOSFET 3.5 A, 150 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 11 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
VISHAY INTERTECHNOLOGY INC
|
RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的,0.150 Ohm的N通道,逻辑层次,额定静电,功率MOSFET 2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET From old datasheet system
|
Fairchild Semiconductor, Corp. INTERSIL[Intersil Corporation]
|
SP0610LE-6288 BSS129E-6325 BSS149E-6288 |
180 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 350 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
SIEMENS AG INFINEON TECHNOLOGIES AG
|
IRFP230 SSH40N15A SSH20N50A IRFP330 SSH60N10A |
9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P 40 A, 150 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P 20 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P 60 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
|
FAIRCHILD SEMICONDUCTOR CORP
|
APT2X31D20J_05 APT2X30D20J APT2X31D20J APT2X31D20J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
OBN01407 OBN01410 OBN01013 OBN01016 OBN01031 OBN01 |
150-200 WATTS SINGLE & MULTIPLE OUTPUT AC/DC MEDICAL
|
Powerbox
|
MJH11019G MJH11018G |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-218 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150−250 VOLTS, 150 WATTS 15 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-218
|
ON Semiconductor
|
PHX18NQ20T PHX18NQ20T-01 PHX18NQ20T127 |
From old datasheet system 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220F, 3 PIN N-channel enhancement mode field-effect transistor 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
BU406 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS
|
Motorola, Inc ON Semiconductor
|
SUM09MN20-270 SUM09N20-270 |
N-Channel 200-V (D-S) 175C MOSFET N-Channel 200-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
|
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